Hwaseong, South Korea

Dohyun Lee

This inventor holds 15 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Devices. Top assignees: Samsung Electronics Co., Ltd., Lg Electronics Inc.. Active years: 2014-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dohyun Lee. Retrieved from https://idiyas.com/inventor/dohyun-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 15 

% Patents Active = 100.0

Average Co-Inventor Count = 4.4

ph-index = 5

Forward Citations = 60(Granted Patents)


Location History:

  • Incheon, KR (2014)
  • Hwasung-si, KR (2016)
  • Gyeonggi-do, KR (2019)
  • Hwaseong-si, KR (2017 - 2020)
  • Seoul, KR (2021 - 2024)

Company Filing History:


Years Active: 2014-2025

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Areas of Expertise:
Semiconductor Device
Multi-Bridge Channel
Field Effect Transistor
Display Control
Interconnection Structure
3D Memory
Non-Volatile Memory
Floating Gate
15 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Dohyun Lee

Introduction

Dohyun Lee is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 15 patents. His work has been instrumental in advancing electronic devices and their functionalities.

Latest Patents

Among his latest patents, Dohyun Lee has developed a semiconductor device and an electronic apparatus that includes this semiconductor device. This innovative semiconductor device features a first source/drain structure with a first semiconductor region and a first electrode in electrical contact with it. Additionally, it includes a second source/drain structure with a second semiconductor region and a second electrode. The design incorporates a channel between the two semiconductor regions and a gate structure that includes a gate insulating film and a gate electrode. Notably, the first source/drain structure also features a silicide film and a conductive barrier made of a two-dimensional material.

Another significant patent is the multi-bridge channel field effect transistor with a recessed source/drain. This semiconductor device comprises an active region, multiple channel layers, gate electrodes, a source/drain region, and a contact structure. The active region is positioned on a substrate and extends in a specific direction, while the channel layers are vertically spaced apart. The gate electrodes intersect the active region and channel layers, and the source/drain region is located on at least one side of the gate electrodes.

Career Highlights

Dohyun Lee has worked with leading companies in the electronics industry, including Samsung Electronics Co., Ltd. and LG Electronics Inc. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking technologies in the semiconductor field.

Collaborations

Throughout his career, Dohyun Lee has collaborated with notable colleagues such as Jaeduk Lee and Youngwoo Park. These partnerships have fostered innovation and have been crucial in the development of advanced semiconductor technologies.

Conclusion

Dohyun Lee's contributions to semiconductor technology are noteworthy, with a portfolio of 15 patents that reflect his innovative spirit. His work continues to influence the electronics industry, paving the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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