The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2014
Filed:
Jan. 07, 2011
Jaeduk Lee, Seongnam-si, KR;
Albert Fayrushin, Suwon-si, KR;
Byungkyu Cho, Seoul, KR;
Jungdal Choi, Hwaseong-si, KR;
Sunghoi Hur, Seoul, KR;
Kwang Soo Seol, Yongin-si, KR;
Dohyun Lee, Incheon, KR;
Jaeduk Lee, Seongnam-si, KR;
Albert Fayrushin, Suwon-si, KR;
ByungKyu Cho, Seoul, KR;
Jungdal Choi, Hwaseong-si, KR;
Sunghoi Hur, Seoul, KR;
Kwang Soo Seol, Yongin-si, KR;
Dohyun Lee, Incheon, KR;
Abstract
Provided are nonvolatile memory devices and a method of forming the same. A tunnel insulating pattern is provided on a substrate, and a floating gate is provided on the tunnel insulating pattern. A floating gate cap having a charge trap site is provided on the floating gate, and a gate dielectric pattern is provided on the floating gate cap. A control gate is provided on the gate dielectric pattern.