The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2021

Filed:

Jun. 05, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Donghee Seo, Suwon-si, KR;

Heonbok Lee, Suwon-si, KR;

Tae-Yeol Kim, Hwaseong-si, KR;

Daeyong Kim, Yongin-si, KR;

Dohyun Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49844 (2013.01); H01L 23/49811 (2013.01); H01L 29/78 (2013.01);
Abstract

A semiconductor device including an interlayer insulating layer on a substrate; a conductive line on the interlayer insulating layer; and a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line, wherein the contact plug includes an upper pattern penetrating an upper region of the interlayer insulating layer, the upper pattern protruding upwardly from a top surface of the interlayer insulating layer, the upper pattern includes a first portion penetrating the upper region of the interlayer insulating layer; and a second portion protruding upwardly from the top surface of the interlayer insulating layer, and a width of a lower region of the second portion in a direction parallel to a top surface of the substrate is greater than a width of an upper region of the second portion in the direction parallel to the top surface of the substrate.


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