The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2019
Filed:
May. 29, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Dohyun Lee, Gyeonggi-do, KR;
Jaegoo Lee, Gyeonggi-do, KR;
Young-Jin Kwon, Gyeonggi-do, KR;
Youngwoo Park, Seoul, KR;
Jaeduk Lee, Gyeonggi-do, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A semiconductor device includes a lower stack structure including lower gate electrodes and lower insulating layers that are alternately and repeatedly stacked on a substrate. The semiconductor device includes an upper stack structure including upper gate electrodes and upper insulating layers that are alternately and repeatedly stacked on the lower stack structure. A lower channel structure penetrates the lower stack structure. An upper channel structure penetrates and is connected to the upper stack structure. A lower vertical insulator is disposed between the lower stack structure and the lower channel structure. The lower channel structure includes a first vertical semiconductor pattern connected to the substrate, and a first connecting semiconductor pattern disposed on the first vertical semiconductor pattern. The upper channel structure includes a second vertical semiconductor pattern electrically connected to the first vertical semiconductor pattern with the first connecting semiconductor pattern disposed therebetween.