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For the Inventor, By the Inventor

San Jose, CA, United States of America

Dmitry Poplavskyy

This inventor holds 20 USPTO granted patents and 11 published patent applications and 1 EPO patent, primarily in Nanoparticle Technology. Top assignees: Innovalight, Inc., E.i. Dupont De Nemours and Company, Beijing Apollo Ding Rong Solar Technology Co., Ltd.. Active years: 2009-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dmitry Poplavskyy. Retrieved from https://idiyas.com/inventor/dmitry-poplavskyy

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 20 

% Patents Active = 55.0

 

Average Co-Inventor Count = 3.1

ph-index = 6

Forward Citations = 96(Granted Patents)


Company Filing History:

goldMedal14 out of 35 
 
Innovalight, Inc.
 patents
silverMedal4 out of 16,339 
 
E.i. Dupont De Nemours and Company
 patents
bronzeMedal2 out of 33 
 
Beijing Apollo Ding Rong Solar Technology Co., Ltd.
 patents

Years Active: 2009-2019

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Areas of Expertise:
Transparent Conductive Oxide
Photovoltaic Cell
Interdigitated Back Contact
Silicon Nanoparticle Fluid
High Efficiency Solar Cell
Dopant Diffusion Profiles
Low Resistance Contact
Nanoparticle Thin Film
Composite Metallization Contacts
Reactive Gases
Junction Formation
Dual-Doped Emitter
20 patents (USPTO):Explore Patents
1. 10367116 - Method of reducing sodium concentration in a transparent conductive oxide layer of a semiconductor device (2019-07-30),
2. 10062801 - Method of reducing sodium concentration in a transparent conductive oxide layer of a semiconductor device (2018-08-28),
3. 9496136 - Group IV nanoparticle fluid (2016-11-15),
4. 9306087 - Method for manufacturing a photovoltaic cell with a locally diffused rear side (2016-04-05),
5. 9246029 - Method for manufacturing an interdigitated back contact solar cell (2016-01-26),
6. 9059341 - Method for manufacturing an interdigitated back contact solar cell (2015-06-16),
7. 9048374 - Method for manufacturing an interdigitated back contact solar cell (2015-06-02),
8. 8895348 - Methods of forming a high efficiency solar cell with a localized back surface field (2014-11-25),
9. 8420517 - Methods of forming a multi-doped junction with silicon-containing particles (2013-04-16),
10. 8394658 - Methods of using a silicon nanoparticle fluid to control in situ a set of dopant diffusion profiles (2013-03-12),
11. 8361834 - Methods of forming a low resistance silicon-metal contact (2013-01-29),
12. 8273669 - Method of forming a passivated densified nanoparticle thin film on a substrate (2012-09-25),
13. 8163587 - Methods of using a silicon nanoparticle fluid to control in situ a set of dopant diffusion profiles (2012-04-24),
14. 8138070 - Methods of using a set of silicon nanoparticle fluids to control in situ a set of dopant diffusion profiles (2012-03-20),
15. 7998359 - Methods of etching silicon-containing films on silicon substrates (2011-08-16),

Title: The Innovation Journey of Dmitry Poplavskyy

Introduction:

Dmitry Poplavskyy, a prolific inventor based in San Jose, CA, has left a significant mark in the field of semiconductor technology with his groundbreaking patents and innovative solutions.

Latest Patents:

Dmitry Poplavskyy's latest patents include a method for reducing sodium concentration in a transparent conductive oxide layer of a semiconductor device. This method involves effectively removing sodium from the transparent conductive oxide layer, contributing to improved semiconductor device performance.

Career Highlights:

With an impressive portfolio of 20 patents, Dmitry Poplavskyy has showcased his expertise and creativity in the semiconductor industry. His work reflects a deep understanding of materials science and semiconductor physics, pushing the boundaries of technological advancements.

Collaborations:

Throughout his career, Dmitry Poplavskyy has collaborated with prominent companies such as Innovalight, Inc., and E.I. du Pont de Nemours and Company. Working alongside skilled professionals like Maxim Kelman and Giuseppe Scardera, he has contributed to collaborative projects that have driven innovation in the industry.

Conclusion:

In conclusion, Dmitry Poplavskyy stands out as a pioneering inventor who continues to make significant contributions to the field of semiconductor technology. His dedication to pushing the boundaries of innovation and his collaborative spirit underline his impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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