The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Sep. 04, 2012
Giuseppe Scardera, Sunnyvale, CA (US);
Maxim Kelman, Mountain View, CA (US);
Elena V Rogojina, San Jose, CA (US);
Dmitry Poplavskyy, San Jose, CA (US);
Elizabeth Tai, Cupertino, CA (US);
Gonghou Wang, Foster City, CA (US);
Giuseppe Scardera, Sunnyvale, CA (US);
Maxim Kelman, Mountain View, CA (US);
Elena V Rogojina, San Jose, CA (US);
Dmitry Poplavskyy, San Jose, CA (US);
Elizabeth Tai, Cupertino, CA (US);
Gonghou Wang, Foster City, CA (US);
E I DU PONT DE NEMOURS AND COMPANY, Wilmington, DE (US);
Abstract
A method for manufacturing a photovoltaic cell with a locally diffused rear side, comprising steps of: (a) providing a doped silicon substrate, the substrate comprising a front, sunward facing, surface and a rear surface; (b) forming a silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the rear surface in a pattern, the boron-containing paste comprising a boron compound and a solvent; (d) depositing a phosphorus-containing doping paste on the rear surface in a pattern, the phosphorus-containing doping paste comprising a phosphorus compound and a solvent; (e) heating the silicon substrate in an ambient to a first temperature and for a first time period in order to locally diffuse boron and phosphorus into the rear surface of the silicon substrate.