The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2014

Filed:

Nov. 28, 2012
Applicant:

Innovalight, Wilmington, DE (US);

Inventors:

Karim Lofti Bendimerad, San Francisco, CA (US);

Daniel Aneurin Inns, Sunnyvale, CA (US);

Dmitry Poplavskyy, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/0216 (2014.01); H01L 31/18 (2006.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/02168 (2013.01); H01L 31/18 (2013.01); H01L 31/068 (2013.01); H01L 31/1804 (2013.01); Y02E 10/547 (2013.01);
Abstract

A solar cell, comprising: a doped silicon substrate, the silicon substrate comprising a front surface and a rear surface; a front phosphorous diffusion layer formed on the front surface; a front anti-reflective layer formed on the front phosphorous diffusion layer; a front metal electrode on the front surface in ohmic contact with the front phosphorous diffusion layer through the front anti-reflective layer; a rear passivation layer formed on the rear surface; a rear metal electrode in a pattern on the rear surface passing through the rear passivation layer; and a rear p+ diffusion area on the rear surface between the rear passivation layer and a boron-doped region of the silicon substrate, the rear p+ diffusion area surrounding the rear metal electrode.


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