The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Nov. 20, 2013
E I Du Pont DE Nemours and Company, Wilmington, DE (US);
Giuseppe Scardera, Sunnyvale, CA (US);
Dmitry Poplavskyy, San Jose, CA (US);
Daniel Aneurin Inns, Palo Alto, CA (US);
Karim Lotfi Bendimerad, San Francisco, CA (US);
Shannon Dugan, Sunnyvale, CA (US);
E I DU PONT DE NEMOURS AND COMPANY, Wilmington, DE (US);
Abstract
A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) forming a first silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the first silicon dioxide layer of the rear surface in a first pattern; (d) heating the silicon substrate; (e) removing the first silicon dioxide layer; (f) forming a second silicon dioxide layer on the front surface and the rear surface; (g) depositing a phosphorus-containing doping paste on the second dioxide layer of the rear surface in a second pattern; (h) heating the silicon substrate; and (i) removing the second silicon dioxide layer from the silicon substrate, wherein the first pattern and the second pattern collectively form an interdigitated pattern.