The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
Apr. 26, 2017
Applicant:
Beijing Apollo Ding Rong Solar Technology Co., Ltd., Beijing, CN;
Inventor:
Dmitry Poplavskyy, San Jose, CA (US);
Assignee:
BEIJING APOLLO DING RONG SOLAR TECHNOLOGY CO., LTD., Beijing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/18 (2006.01); H01L 31/032 (2006.01); H01L 31/05 (2014.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01); H01L 31/0749 (2012.01); H01L 31/0445 (2014.01);
U.S. Cl.
CPC ...
H01L 31/1884 (2013.01); H01L 21/6776 (2013.01); H01L 21/67115 (2013.01); H01L 21/67173 (2013.01); H01L 31/0322 (2013.01); H01L 31/0445 (2014.12); H01L 31/0504 (2013.01); H01L 31/0508 (2013.01); H01L 31/0512 (2013.01); H01L 31/0749 (2013.01); H01L 31/18 (2013.01); H01L 31/186 (2013.01);
Abstract
A method of making a semiconductor device includes forming a semiconductor material stack having a sodium at an atomic concentration greater than 1×10/cm, depositing a transparent conductive oxide layer over the semiconductor material stack, such that sodium atoms diffuse from the semiconductor material stack into the transparent conductive oxide layer, and contacting a physically exposed surface of the transparent conductive oxide layer with a fluid to remove sodium from the transparent conductive oxide layer.