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For the Inventor, By the Inventor

Mahopac, NY, United States of America

Dianne L Lacey

This inventor holds 11 USPTO granted patents and 2 EPO patents. Top assignee: International Business Machines Corporation. Active years: 1989-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dianne L Lacey. Retrieved from https://idiyas.com/inventor/dianne-l-lacey

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 11

% Patents Active = 45.5


Average Co-Inventor Count = 6.7

ph-index = 6

Forward Citations = 126(Granted Patents)


Company Filing History:

goldMedal11 out of 166,351 
 
International Business Machines Corporation
 patents

Years Active: 1989-2012

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11 patents (USPTO):Explore Patents
1. 8288237 - [object Object] (2012-10-16),
2. 8153514 - Method of forming metal/high-κ gate stacks with high mobility (2012-04-10),
3. 7667277 - [object Object] (2010-02-23),
4. 7566938 - Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures (2009-07-28),
5. 7521346 - Method of forming HfSiN metal for n-FET applications (2009-04-21),
6. 7115959 - Method of forming metal/high-k gate stacks with high mobility (2006-10-03),
7. 6982230 - Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures (2006-01-03),
8. 6798953 - Guides lithographically fabricated on semiconductor devices (2004-09-28),
9. 6573197 - Thermally stable poly-Si/high dielectric constant material interfaces (2003-06-03),
10. 4859253 - Method for passivating a compound semiconductor surface and device (1989-08-22),
11. 4853346 - Ohmic contacts for semiconductor devices and method for forming ohmic (1989-08-01),

Title: Innovator Spotlight - Dianne L Lacey

Introduction:

Dianne L Lacey, a prolific inventor based in Mahopac, NY, has made significant contributions to the field of semiconductor devices with his innovative patented technologies. With a total of 11 patents to his name, Dianne L Lacey's work is characterized by its cutting-edge advancements and commitment to excellence.

Latest Patents:

1. Compound Metal Comprising TiC: Dianne L Lacey's patented compound metal comprising TiC is a groundbreaking material with a workfunction of about 4.75 to 5.3 eV, making it thermally stable on gate stacks with high k dielectrics. This metal serves as an efficient oxygen diffusion barrier, allowing for aggressive thickness scaling in pMOS devices.

2. Method of Forming Metal/High-κ Gate Stacks: Another notable invention by Dianne L Lacey is the method of fabricating gate stack structures with high mobilities and low interfacial charges. This technology is crucial for enhancing the performance of metal oxide semiconductor field effect transistors (MOSFETs) by achieving a peak mobility of 250 cm²/V-s or greater.

Career Highlights:

Dianne L Lacey is associated with the renowned International Business Machines Corporation (IBM). His tenure at IBM has been marked by a series of groundbreaking inventions that have pushed the boundaries of semiconductor technology and paved the way for future innovations in the industry.

Collaborations:

Throughout his career, Dianne L Lacey has collaborated with esteemed colleagues such as Alessandro Cesare Callegari and Michael Abramovich Gribelyuk. These partnerships have been instrumental in driving forward key research projects and bringing revolutionary ideas to fruition.

Conclusion:

In conclusion, Dianne L Lacey stands out as a visionary inventor who continues to make waves in the field of semiconductor devices. His relentless pursuit of innovation and his unwavering dedication to excellence make him a standout figure in the industry, shaping the future of technology with each new patent.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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