The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Oct. 19, 2007
Alessandro C. Callegari, Yorktown Heights, NY (US);
Martin M. Frank, New York, NY (US);
Rajarao Jammy, Hopewell Junction, NY (US);
Dianne L. Lacey, Mahopac, NY (US);
Fenton R. Mcfeely, Ossining, NY (US);
Sufi Zafar, Briarcliff Manor, NY (US);
Alessandro C. Callegari, Yorktown Heights, NY (US);
Martin M. Frank, New York, NY (US);
Rajarao Jammy, Hopewell Junction, NY (US);
Dianne L. Lacey, Mahopac, NY (US);
Fenton R. McFeely, Ossining, NY (US);
Sufi Zafar, Briarcliff Manor, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A compound metal comprising HfSiN which is a n-type metal having a workfunction of about 4.0 to about 4.5, preferably about 4.3, eV which is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer. Furthermore, after annealing the stack of HfSiN/high k dielectric/interfacial layer at a high temperature (on the order of about 1000° C.), there is a reduction of the interfacial layer, thus the gate stack produces a very small equivalent oxide thickness (12 Å classical), which cannot be achieved using TaSiN.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile