The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Aug. 14, 2009
Alessandro C. Callegari, Yorktown Heights, NY (US);
Michael A. Gribelyuk, Stamford, CT (US);
Dianne L. Lacey, Mahopac, NY (US);
Fenton R. Feeney, Ossining, NY (US);
Katherine L. Saenger, Ossining, NY (US);
Sufi Zafar, Briarcliff Manor, NY (US);
Alessandro C. Callegari, Yorktown Heights, NY (US);
Michael A. Gribelyuk, Stamford, CT (US);
Dianne L. Lacey, Mahopac, NY (US);
Fenton R. Feeney, Ossining, NY (US);
Katherine L. Saenger, Ossining, NY (US);
Sufi Zafar, Briarcliff Manor, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A compound metal comprising TiC which is a p-type metal having a workfunction of about 4.75 to about 5.3, preferably about 5, eV that is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer is provided as well as a method of fabricating the TiC compound metal. Furthermore, the TiC metal compound of the present invention is a very efficient oxygen diffusion barrier at 1000° C. allowing very aggressive equivalent oxide thickness (EOT) and inversion layer thickness scaling below 14 Å in a p-metal oxide semiconductor (pMOS) device.