The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2003
Filed:
Apr. 12, 2001
Alessandro C. Callegari, Yorktown Heights, NY (US);
Evgeni Gousev, Mahopac, NY (US);
Michael A. Gribelyuk, Poughquag, NY (US);
Paul C. Jamison, Hopewell Junction, NY (US);
Dianne L. Lacey, Mahopac, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention provides a method of fabricating a thermally stable polysilicon/high-k dielectric film stack utilizing a deposition method wherein Si-containing precursor gas which includes silicon and hydrogen is diluted with an inert gas such as He so as to significantly reduce the hydrogen content in the resultant polysilicon film. Semiconductor structures such as field effect transistors (FETs) and capacitors which include at least the thermally stable polysilicon/high-k dielectric film stack are also provided herein.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile