logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6982230 B1

PDFFull Text
Expired
Date of Patent:
Jan. 03, 2006

Filed:

Nov. 08, 2002

Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures

Applicants:

Cyril Cabral, Jr., Ossining, NY (US);

Alessandro C. Callegari, Yorktown Heights, NY (US);

Michael A. Gribelyuk, Poughquag, NY (US);

Paul C. Jamison, Hopewell Junction, NY (US);

Dianne L. Lacey, Mahopac, NY (US);

Fenton R. Mcfeely, Ossining, NY (US);

Vijay Narayanan, New York, NY (US);

Deborah A. Neumayer, Danbury, CT (US);

Pushkar Ranade, Hillsboro, OR (US);

Sufi Zafar, Briarcliff Manor, NY (US);

Inventors:

Cyril Cabral, Jr., Ossining, NY (US);

Alessandro C. Callegari, Yorktown Heights, NY (US);

Michael A. Gribelyuk, Poughquag, NY (US);

Paul C. Jamison, Hopewell Junction, NY (US);

Dianne L. Lacey, Mahopac, NY (US);

Fenton R. McFeely, Ossining, NY (US);

Vijay Narayanan, New York, NY (US);

Deborah A. Neumayer, Danbury, CT (US);

Pushkar Ranade, Hillsboro, OR (US);

Sufi Zafar, Briarcliff Manor, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Scully, Scott, Murphy & Presser

Robert M. Trepp, Esq.

Primary Examiner:

George Fourson

Assistant Examiner:

Thanh V Pham

Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating hafnium oxide and/or zirconium oxide films is provided. The methods include providing a mixture of Hf and/or Zr alkoxide dissolved, emulsified or suspended in a liquid; vaporizing at least the alkoxide and depositing the vaporized component at a temperature of greater than 400° C. The resultant film is dense, microcrystalline and is capable of self-passivation when treated in a hydrogen plasma or forming gas anneal.

Find Patent Forward Citations

Cabral, Jr., Cyril. (2006). Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures (U.S. Patent No. 6982230). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6982230

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…