The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 1989
Filed:
Dec. 31, 1987
John M Baker, Yorktown Heights, NY (US);
Alessandro C Callegari, Yorktown Heights, NY (US);
Dianne L Lacey, Mahopac, NY (US);
Yih-Cheng Shih, Middletown, NJ (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming an ohmic contact on a GaAs semiconductor material comprising depositing a non-uniform layer of Au onto the surface layer of the semiconductor material, depositing a multi-layer ohmic contact of AuGeNi onto the non-uniform layer and alloying the ohmic contact to the semiconductor material. The non-uniform Au layer may be deposited by backscattering Au during sputter cleaning of the semiconductor surface wherein the electrode is coated with Au. After alloying, the ohmic contact comprises a two layer structure having a high density of large area NiAs(Ge) grains contacting the semiconductor material as the first layer and an AuGa phase as the top layer. The ohmic contact has reduced contact resistance and exhibits a reduction in the spread of contact resistance after high temperature annealing.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile