Ichon, South Korea

Deok-Sin Kil

This inventor holds 33 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Technology. Top assignees: Hynix Semiconductor Inc., Skhynix Inc.. Active years: 2005-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Deok-Sin Kil. Retrieved from https://idiyas.com/inventor/deok-sin-kil

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 33 

% Patents Active = 48.5

Average Co-Inventor Count = 4.6

ph-index = 6

Forward Citations = 422(Granted Patents)


Location History:

  • Kyoungki-do, KR (2005 - 2010)
  • Icheon-si, KR (2011 - 2012)
  • Ichon-shi, KR (2007 - 2015)
  • Gyeonggi-do, KR (2013 - 2022)

Company Filing History:


Years Active: 2005-2022

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Areas of Expertise:
Semiconductor Device
Capacitor Fabrication
High Work Function
Ruthenium Electrode
Pillar Type Storage Node
Nano-Composite Dielectric
Dielectric Layer
Atomic Layer Deposition
Ozone Reaction Gas
Amorphous Carbon
Tetragonal Zirconium Oxide
Sacrificial Pattern
33 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Deok-Sin Kil in Semiconductor Technology

Introduction: Deok-Sin Kil, based in Ichon-shi, South Korea, is a prolific inventor with a remarkable portfolio that includes 33 patents. His work primarily focuses on advancements in semiconductor technologies, where his innovations have contributed significantly to the field.

Latest Patents: Among his latest patents are two noteworthy inventions. The first patent describes a semiconductor device and a method for fabricating the same. This method includes several steps such as forming a first electrode, constructing a dielectric layer stack with an initial hafnium oxide layer and a doping layer, and crystallizing the hafnium oxide into tetragonal hafnium oxide using a thermal source layer. The second patent outlines the fabrication of a capacitor with a high work function interface layer. This method involves creating a bottom electrode, applying a dielectric layer, and incorporating a metal oxide layer with high electronegativity, which is then reduced to form a high work function interface layer.

Career Highlights: Deok-Sin Kil has accumulated extensive experience through his work at prominent companies in the semiconductor industry, notably at Hynix Semiconductor Inc. and SK Hynix Inc. His contributions in these roles have demonstrated his expertise and commitment to innovation in semiconductor manufacturing and design.

Collaborations: Throughout his career, Kil has collaborated with talented colleagues, including Jin-Hyock Kim and Jae-Sung Roh. These partnerships have fostered an environment of creativity and technological advancement, further enhancing the impact of their work in the semiconductor field.

Conclusion: Deok-Sin Kil's contributions to semiconductor technology through his numerous patents and collaborative projects showcase his dedication as an inventor. His innovative methods not only push the boundaries of semiconductor fabrication but also pave the way for future advancements in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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