The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Dec. 24, 2008
Kwan-woo DO, Icheon-si, KR;
Kee-jeung Lee, Icheon-si, KR;
Deok-sin Kil, Icheon-si, KR;
Young-dae Kim, Icheon-si, KR;
Jin-hyock Kim, Icheon-si, KR;
Kyung-woong Park, Icheon-si, KR;
Jeong-yeop Lee, Icheon-si, KR;
Kwan-Woo Do, Icheon-si, KR;
Kee-Jeung Lee, Icheon-si, KR;
Deok-Sin Kil, Icheon-si, KR;
Young-Dae Kim, Icheon-si, KR;
Jin-Hyock Kim, Icheon-si, KR;
Kyung-Woong Park, Icheon-si, KR;
Jeong-Yeop Lee, Icheon-si, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A semiconductor device and a method of fabricating the same include an electrode having a nickel layer with impurities. The electrode having a nickel layer with impurities can be a gate electrode or a capacitor electrode. The electrode having a nickel layer with impurities may include a combination of a pure nickel layer and a nickel layer with impurities.