The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2012

Filed:

Dec. 27, 2007
Applicants:

Kwan-woo DO, Ichon-shi, KR;

Jae-sung Roh, Ichon-shi, KR;

Kee-jeung Lee, Ichon-shi, KR;

Deok-sin Kil, Ichon-shi, KR;

Young-dae Kim, Ichon-shi, KR;

Jin-hyock Kim, Ichon-shi, KR;

Kyung-woong Park, Ichon-shi, KR;

Han-sang Song, Ichon-si, KR;

Inventors:

Kwan-Woo Do, Ichon-shi, KR;

Jae-Sung Roh, Ichon-shi, KR;

Kee-Jeung Lee, Ichon-shi, KR;

Deok-Sin Kil, Ichon-shi, KR;

Young-Dae Kim, Ichon-shi, KR;

Jin-Hyock Kim, Ichon-shi, KR;

Kyung-Woong Park, Ichon-shi, KR;

Han-Sang Song, Ichon-si, KR;

Assignee:

Hynix Semiconductor Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A capacitor includes a lower electrode, a dielectric layer, an upper electrode, and a ruthenium oxide layer. At least one of the lower electrode and the upper electrode is formed of a ruthenium layer, and the ruthenium oxide layer is disposed next to the ruthenium layer.


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