The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Jun. 04, 2010
Jin-hyock Kim, Ichon-shi, KR;
Seung-jin Yeom, Ichon-shi, KR;
Ki-seon Park, Ichon-shi, KR;
Han-sang Song, Ichon-shi, KR;
Deok-sin Kil, Ichon-shi, KR;
Jae-sung Roh, Ichon-shi, KR;
Jin-Hyock Kim, Ichon-shi, KR;
Seung-Jin Yeom, Ichon-shi, KR;
Ki-Seon Park, Ichon-shi, KR;
Han-Sang Song, Ichon-shi, KR;
Deok-Sin Kil, Ichon-shi, KR;
Jae-Sung Roh, Ichon-shi, KR;
SK Hynix Inc., Gyeonggi-do, KR;
Abstract
A method for fabricating a capacitor includes: forming a storage node contact plug over a substrate; forming an insulation layer having an opening exposing a surface of the storage node contact plug over the storage contact plug; forming a conductive layer for a storage node over the insulation layer and the exposed surface of the storage node contact plug through two steps performed at different temperatures; performing an isolation process to isolate parts of the conductive layer; and sequentially forming a dielectric layer and a plate electrode over the isolated conductive layer.