Hynix Semiconductor Inc.

Skhynix Inc.

Deok-Sin Kil

Jin-Hyock Kim

Jae-Sung Roh

Han-Sang Song

Seung-Jin Yeom

Kee-Jeung Lee

Young-Dae Kim

Kwan-Woo Do

Ki-Seon Park

Kyung-Woong Park

Beom-Yong Kim

Jeong-Yeop Lee

Hee-Young Jeon

Hun Wook Lee

Hyun-Chul Sohn

Kwon Hong

Min-Gyu Sung

Sook-Joo Kim

Yu-Jin Kim

Se-Hun Kang

Ja-Yong Kim

Hyuk-Kyoo Jang

A method for fabricating a capacitor includes forming a first electrode, forming a dielectric layer stack on the first electrode, the dielectric layer stack including an initial hafnium oxide layer and a seed layer having a doping layer embedded therein, forming a thermal source layer on the dielectric layer stack to crystallize the initial hafnium oxide into tetragonal hafnium oxide, and forming a second electrode on the thermal source layer.

Semiconductor device and method for fabricating the same

A method for fabricating a capacitor includes: forming a bottom electrode; forming a dielectric layer on the bottom electrode; forming a metal oxide layer including a metal having a high electronegativity on the dielectric layer; forming a sacrificial layer on the metal oxide layer to reduce the metal oxide layer to a metal layer; and forming a top electrode on the sacrificial layer to convert the reduced metal layer into a high work function interface layer.

Capacitor with high work function interface layer

A method for fabricating a semiconductor device includes: forming a bottom electrode of a high aspect ratio; forming an interface layer by sequentially performing a first plasma process and a second plasma process onto a surface of the bottom electrode; forming a dielectric layer over the interface layer; and forming a top electrode over the dielectric layer.

A method for fabricating semiconductor device includes: forming a bottom electrode of a high aspect ratio; forming an interface layer by sequentially performing a first plasma process and a second plasma process onto a surface of the bottom electrode; forming a dielectric layer over the interface layer; and forming a top electrode over the dielectric layer.

A method for fabricating a capacitor includes: forming a storage node contact plug over a substrate; forming an insulation layer having an opening exposing a surface of the storage node contact plug over the storage contact plug; forming a conductive layer for a storage node over the insulation layer and the exposed surface of the storage node contact plug through two steps performed at different temperatures; performing an isolation process to isolate parts of the conductive layer; and sequentially forming a dielectric layer and a plate electrode over the isolated conductive layer.

Method for fabricating capacitor

A capacitor includes a pillar-type storage node, a supporter disposed entirely within an inner empty crevice of the storage node, a conductive capping layer over the supporter and contacting the storage node so as to seal an entrance to the inner empty crevice, a dielectric layer over the storage node, and a plate node over the dielectric layer.

Capacitor with pillar type storage node and method for fabricating the same

A semiconductor device includes a lower electrode, a variable resistance layer disposed over the lower electrode, the variable resistance layer is included a reactive metal layer being interposed between a plurality of oxide resistive layers and an upper electrode disposed over the variable resistance layer.

A capacitor includes a lower electrode, a dielectric layer, an upper electrode, and a ruthenium oxide layer. At least one of the lower electrode and the upper electrode is formed of a ruthenium layer, and the ruthenium oxide layer is disposed next to the ruthenium layer.

A noble metal layer is formed using ozone (O) as a reaction gas.

Method of forming noble metal layer using ozone reaction gas

A semiconductor device and a method of fabricating the same include an electrode having a nickel layer with impurities. The electrode having a nickel layer with impurities can be a gate electrode or a capacitor electrode. The electrode having a nickel layer with impurities may include a combination of a pure nickel layer and a nickel layer with impurities.

Method of fabricating capacitor

A semiconductor device, and a method of fabricating the semiconductor device, which is able to prevent a leaning phenomenon from occurring between the adjacent storage nodes. The method includes forming a plurality of multi-layered pillar type storage nodes each of which is buried in a plurality of mold layers, wherein the uppermost layers of the multi-layered pillar type storage nodes are fixed by a support layer, etching a portion of the support layer to form an opening, and supplying an etch solution through the opening to remove the multiple mold layers. A process of depositing and etching the mold layer by performing the process 2 or more times to form the multi-layered pillar type storage node. Thus, the desired capacitance is sufficiently secured and the leaning phenomenon is avoided between adjacent storage nodes.

Semiconductor device and method of fabricating the same

A semiconductor device includes a semiconductor substrate, an insulation pattern on the semiconductor substrate, and an etch stop layer on the insulating pattern, the insulation pattern and the etch stop layer defining a contact hole that exposes the substrate, a first plug filled in a portion of the contact hole, a diffusion barrier layer formed above the first plug and in a bottom portion and on sidewalls of a remaining portion of the contact hole, a second plug fainted on the diffusion barrier layer and filled in the contact hole, and a storage node coupled to and formed on the second plug.

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Ichon-shi, South Korea

Deok-Sin Kil