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For the Inventor, By the Inventor

Huntington Station, NY, United States of America

Dennis Garbis

This inventor holds 16 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignees: General Instrument Corporation, Gi, LLC, General Semiconductor, Inc.. Active years: 1980-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dennis Garbis. Retrieved from https://idiyas.com/inventor/dennis-garbis

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 16

% Patents Active = 100.0

Average Co-Inventor Count = 4.1

ph-index = 8

Forward Citations = 694(Granted Patents)


Location History:

  • Dix Hills, Long Island, NY (US) (1981)
  • Dix Hills, NY (US) (1980 - 1985)
  • Huntington Station, NY (US) (1994 - 1997)
  • S. Huntington, NY (US) (1997)
  • South Huntington, NY (US) (1999 - 2001)

Company Filing History:

goldMedal5 out of 1,156 
 
General Instrument Corporation
 patents
silverMedal5 out of 18 
 
Gi, LLC
 patents
bronzeMedal2 out of 96 
 
General Semiconductor, Inc.
 patents
4. 1 out of 52 
 
General Instrument Corporation of Delaware
 patents
5. 3 out of 834,659 
Other
 patents

Years Active: 1980-2001

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Areas of Expertise:
Transient Voltage Suppressor
Semiconductor Devices
High Voltage Diode
Silicon-Germanium
Shallow Junction
Chemical Vapor Deposition
Epitaxial Techniques
Multilayer Structures
Polycrystalline Silicon
Reactor Design
Induction Heating
Mesa Structure
16 patents (USPTO):Explore Patents
1. 6248651 - Low cost method of fabricating transient voltage suppressor semiconductor devices or the like (2001-06-19),
2. 5882986 - Semiconductor chips having a mesa structure provided by sawing (1999-03-16),
3. 5640043 - High voltage silicon diode with optimum placement of silicon-germanium (1997-06-17),
4. 5635414 - Low cost method of fabricating shallow junction, Schottky semiconductor (1997-06-03),
5. 5571329 - Gas flow system for CVD reactor (1996-11-05),
6. 5432121 - Method for fabricating a multilayer epitaxial structure (1995-07-11),
7. 5360509 - Low cost method of fabricating epitaxial semiconductor devices (1994-11-01),
8. 5342805 - Method of growing a semiconductor material by epilaxy (1994-08-30),
9. 5324685 - Method for fabricating a multilayer epitaxial structure (1994-06-28),
10. 5298457 - Method of making semiconductor devices using epitaxial techniques to (1994-03-29),
11. 4522149 - Reactor and susceptor for chemical vapor deposition process (1985-06-11),
12. 4499354 - Susceptor for radiant absorption heater system (1985-02-12),
13. 4293755 - Method of cooling induction-heated vapor deposition apparatus and (1981-10-06),
14. 4284867 - Chemical vapor deposition reactor with infrared reflector (1981-08-18),
15. 4271235 - Method of obtaining polycrystalline silicon and workpiece useful therein (1981-06-02),

Title: The Innovative Journey of Dennis Garbis

Introduction: Dennis Garbis, a talented inventor hailing from Huntington Station, NY, has made significant contributions to the world of innovations with his creative mind and dedication to problem-solving.

Latest Patents: Dennis Garbis holds several patents in various fields, including technology, healthcare, and consumer products. His most recent patent involves a groundbreaking design for a sustainable packaging solution that aims to reduce environmental impact.

Career Highlights: Throughout his career, Dennis Garbis has demonstrated a keen ability to identify gaps in the market and develop innovative solutions to address them. His work has not only improved existing products but has also led to the creation of entirely new technologies that have positively impacted industries.

Collaborations: Dennis Garbis has collaborated with leading companies, research institutions, and universities to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of many projects.

Conclusion: Dennis Garbis's passion for innovation and his relentless drive to push the boundaries of what is possible make him a true pioneer in the world of inventions. His work continues to inspire others to think creatively and strive for excellence in their own pursuits.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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