The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 1994
Filed:
Jul. 01, 1993
Applicant:
Inventors:
William G Einthoven, Belle Mead, NJ (US);
Joseph Y Chan, Kings Park, NY (US);
Dennis Garbis, Huntington Station, NY (US);
Assignee:
G. I. Corporation, Hatboro, PA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437131 ; 437110 ; 437976 ;
Abstract
The all epitaxial process starts with a high resistivity silicon substrate. Alternating layers of silicon and silicon-germanium are epitaxially grown on the substrate under conditions which create a region with misfit dislocations. A low resistivity silicon layer is then grown over the region. The material is inverted such that the high resistivity layer can be used to form the base of the device. The thickness of the high resistivity layer is adjusted to equal the width of the base of the semiconductor device to be fabricated.