Company Filing History:
Years Active: 1994
Title: The Innovations of William G. Einthoven
Introduction
William G. Einthoven is a notable inventor based in Belle Mead, NJ (US). He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative spirit and technical expertise.
Latest Patents
Einthoven's latest patents include a method of growing a semiconductor material by epilaxy. This invention focuses on an improved method of producing sharply defined misfit dislocations, along with a new, cost-effective method of doping these dislocations with gold (Au). His research indicates that a combination of Au and platinum (Pt) doping in misfit dislocations is superior to any amount of Au alone and to specific placements of the misfit dislocations within the device structure. Another patent involves a method of making semiconductor devices using epitaxial techniques. This all-epitaxial process begins with a high resistivity silicon substrate, where alternating layers of silicon and silicon-germanium are epitaxially grown. This process creates a region with misfit dislocations, followed by the growth of a low resistivity silicon layer over the region. The material is then inverted to allow the high resistivity layer to form the base of the device, with its thickness adjusted to match the width of the semiconductor device being fabricated.
Career Highlights
Einthoven is currently associated with Gi, LLC, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing methods that enhance the performance and efficiency of semiconductor devices.
Collaborations
Einthoven has collaborated with notable colleagues such as Joseph Y. Chan and Dennis Garbis, contributing to a dynamic environment of innovation and research.
Conclusion
William G. Einthoven's contributions to semiconductor technology through his patents reflect his dedication to innovation and excellence in the field. His work continues to influence the development of advanced semiconductor devices.