The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 1997
Filed:
Dec. 20, 1995
Jack Eng, Cork City, IE;
Joseph Chan, Kings Park, NY (US);
Lawrence Laterza, Miller Place, NY (US);
Gregory Zakaluk, Seaford, NY (US);
Jun Wu, Flushing, NY (US);
John Amato, Northport, NY (US);
Dennis Garbis, Huntington Station, NY (US);
Willem Einthoven, Belle Mead, NJ (US);
General Instrument Corporation of Delaware, Hatboro, PA (US);
Abstract
A high voltage silicon rectifier includes a substrate portion and an epitaxial mesa portion that is a frustrum of a pyramid with a substantially square cross section and side walls that make a forty five degree angle with the substrate portion. The mesa portion includes three germanium doped layers that introduce strain to speed up recombination of charge carriers. The topography of the base region of the rectifier has a high-low junction that includes a central portion that is deeper in the mesa than the germanium-doped layers and an edge portion that is shallower in the mesa than the germanium-doped layers and forms a positive bevel angle with the tapered side walls of the mesa,