Wuhan, China

Dejia Huang

USPTO Granted Patents = 12 

 

Average Co-Inventor Count = 4.8

ph-index = 2

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2021-2025

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12 patents (USPTO):

Title: **Dejia Huang: Innovator in Memory Technology**

Introduction

Dejia Huang is a prominent inventor based in Wuhan, China, renowned for his contributions to memory technology. With a remarkable portfolio of 10 patents, he has significantly advanced the development of memory devices, particularly in the field of 3D NAND flash technology.

Latest Patents

Among his latest inventions, Dejia Huang has developed a patented 3D NAND flash memory that revolves around a unique operation method. This memory incorporates wordline (WL) layers and features a controller that interfaces with these layers. The controller's innovative approach involves applying a verify voltage to a first WL layer and a first pass voltage to a second WL layer during the verification phase, enhancing the overall programming efficiency of memory cells. Another critical patent describes a programming method for a memory device that employs the strategic movement of first charge carriers at a shallow energy level to optimize programming operations for memory cells, marking a significant step forward in memory device technology.

Career Highlights

Dejia Huang has made significant strides in his career, notably holding positions at Yangtze Memory Technologies Co., Ltd. and Yangzte Memory Technologies, Ltd. His work in these companies has solidified his reputation as a leading figure in the industry.

Collaborations

Throughout his career, Dejia has collaborated with talented professionals, including his colleagues Wenzhe Wei and Hongtao Liu. Their collective expertise in memory technology has fostered an environment of innovation and creativity, further pushing the boundaries of what is possible in the field.

Conclusion

With his extensive knowledge and experience, Dejia Huang continues to be a driving force in the advancement of memory technology. His contributions, particularly in the domain of 3D NAND flash and programming methods, not only illustrate his inventive prowess but also set a foundation for future innovations in the industry.

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