The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Jun. 16, 2023
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Hongtao Liu, Wuhan, CN;
Song Min Jiang, Wuhan, CN;
Dejia Huang, Wuhan, CN;
Ying Huang, Wuhan, CN;
Wenzhe Wei, Wuhan, CN;
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/14 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); G11C 16/3459 (2013.01);
Abstract
A memory includes wordline (WL) layers and a controller coupled to the WL layers. The controller is configured to apply at least one verify voltage to a first WL layer of the WL layers during a verify phase, and apply a first pass voltage to a second WL layer of the WL layers during the verify phase. A first memory cell of the first WL layer is programmed before a second memory cell of the second WL layer. The first pass voltage is higher than a threshold voltage of a memory cell in a lowest programming state.