The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
Jul. 18, 2022
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Hongtao Liu, Wuhan, CN;
Ying Huang, Wuhan, CN;
Wenzhe Wei, Wuhan, CN;
Song Min Jiang, Wuhan, CN;
Dejia Huang, Wuhan, CN;
Wen Qiang Chen, Wuhan, CN;
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/16 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/24 (2006.01); G11C 16/28 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/0408 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01); G11C 16/28 (2013.01); G11C 16/30 (2013.01);
Abstract
A programming method for a memory device is disclosed. The programming method comprises moving a plurality of first charge carriers at a shallow energy level to a channel in a substrate layer before a programming operation for a first word line, wherein the plurality of first charge carriers at the shallow energy level correspond to a memory cell to be programmed.