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Yangzte Memory Technologies., Ltd.

USPTO Granted Patents = 4

Forward Citations = 0

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14 inventors (with patents filed for the assignee):

Hongtao Liu (1 out of 54 patents)

Kun Zhang (1 out of 108 patents)

Wenxi Zhou (1 out of 156 patents)

4. Zhiliang Xia (1 out of 197 patents)

5. Zongliang Huo (1 out of 134 patents)

6. Song Min Jiang (1 out of 7 patents)

7. Dejia Huang (1 out of 12 patents)

8. Ying Huang (1 out of 29 patents)

9. Wenzhe Wei (1 out of 15 patents)

10. Jialiang Deng (1 out of 17 patents)

11. Yufei Feng (1 out of 6 patents)

12. Yahai Liu (1 out of 4 patents)

13. Yuankang Yang (1 out of 2 patents)

14. Shuangshuang Wu (1 out of 3 patents)

4 patents: Sort by Forward Citations

1. 12632376 - Memory systems and operation methods thereof and storage devices and operation methods thereof (2026-05-19),

2. 12626767 - Memory devices, control methods of memory, and memory systems (2026-05-12),

3. 12615775 - Backside gate line slit structure to reduce wafer bow in a three-dimensional memory device comprising bonded devices (2026-04-28),

4. 11342023 - 3D NAND flash and operation method thereof (2022-05-24),

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USPTO Data Jan 1 1976 - Sep 15 2026

4 Patents

#79 in Wuhan

#6,332 in China

Yangzte Memory Technologies., Ltd.

Forward Citations = 0

14 inventors:

Hongtao Liu (1 out of 54 patents)

Kun Zhang (1 out of 108 patents)

Wenxi Zhou (1 out of 156 patents)

4. Zhiliang Xia (1 out of 197 patents)

5. Zongliang Huo (1 out of 134 patents)

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