The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2022
Filed:
Mar. 11, 2021
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Hongtao Liu, Wuhan, CN;
Song Min Jiang, Wuhan, CN;
Dejia Huang, Wuhan, CN;
Ying Huang, Wuhan, CN;
Wenzhe Wei, Wuhan, CN;
Yangzte Memory Technologies., Ltd., Wuhan, CN;
Abstract
An operation method for a 3D NAND flash includes writing data into a WLn layer of the plurality of wordline layers of an unselect bit line of the plurality of bit lines in a write operation; and applying a first pass voltage on at least a first WL layer of the plurality of wordline layers of the unselect bit line of the plurality of bit lines and applying a second pass voltage on at least a second WL layer of the plurality of wordline layers of the unselect bit line of the plurality of bit lines; wherein the operation method is operated when a pre-pulse phase is removed from a verify phase.