The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
Dec. 05, 2019
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Wenzhe Wei, Wuhan, CN;
Hongtao Liu, Wuhan, CN;
Kaikai You, Wuhan, CN;
Da Li, Wuhan, CN;
Ying Huang, Wuhan, CN;
Yali Song, Wuhan, CN;
Dejia Huang, Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
In a memory device which includes a plurality of memory cells, a top dummy storage region, a bottom dummy storage region, a plurality of word lines and a plurality of bit lines form in a substrate, a selected bit line among the plurality of bit lines, a channel region in the substrate and a source region in the substrate are pre-charged and a negative pre-pulse voltage is applied to the bottom dummy storage region during a first period. A selected memory cell among the plurality of memory cells is programmed during a second period subsequent to the first period, wherein the selected memory cell is coupled to the selected bit line and a selected word line among the plurality of word lines.