Company Filing History:

19 out of 5,671

Globalfoundries Inc.

Advanced Micro Devices Corporation

Years Active: 1997-2020

where 'Filed Patents' based on already Granted Patents

42 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 10784402 - Nanowire formation methods (2020-09-22),

2. 10396121 - FinFETs for light emitting diode displays (2019-08-27),

3. 10388691 - Light emitting diodes (LEDs) with stacked multi-color pixels for displays (2019-08-20),

4. 10355043 - Integrated vertical transistors and light emitting diodes (2019-07-16),

5. 10290768 - Nanowire formation methods (2019-05-14),

6. 10283560 - Light emitting diodes (LEDs) with integrated CMOS circuits (2019-05-07),

7. 10263151 - Light emitting diodes (2019-04-16),

8. 10249710 - Methods, apparatus, and system for improved nanowire/nanosheet spacers (2019-04-02),

9. 10217900 - Light emitting diode structures (2019-02-26),

10. 10199429 - LEDs with three color RGB pixels for displays (2019-02-05),

11. 10193011 - Method of manufacturing a 3 color LED integrated Si CMOS driver wafer using die to wafer bonding approach (2019-01-29),

12. 10177178 - Assembly of CMOS driver wafer and LED wafer for microdisplay (2019-01-08),

13. 10056453 - Semiconductor wafers with reduced bow and warpage (2018-08-21),

14. 10037981 - Integrated display system with multi-color light emitting diodes (LEDs) (2018-07-31),

15. 9941330 - LEDs with three color RGB pixels for displays (2018-04-10),

Title: **Innovative Contributions of Deepak K Nayak in Semiconductor Technology**

Introduction

Deepak K Nayak, based in Santa Clara, California, is a prominent inventor known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 42 patents, Nayak's work primarily focuses on the development of advanced light-emitting diode (LED) technologies and related semiconductor structures.

Latest Patents

Among Nayak's most recent patents is a groundbreaking method for the formation of nanowires, which details techniques for integrating InGaN/GaN or AlInGaP/InGaP LEDs on silicon CMOS substrates to produce RGB colors. This method involves several innovative steps, including the creation of trenches with v-shaped bottoms through an oxide layer, the fabrication of AlN or GaAs in these trenches, and the formation of a layered structure comprising n-GaN or n-InGaP pillars topped with quantum wells for efficient light emission.

Another significant patent is focused on finFETs for light-emitting diode displays. This patent outlines a method of manufacturing fin structures equipped with a doped core, aimed at enhancing the efficiency and color output of LED displays. The process involves the strategic doping of quantum wells to create distinct color-emitting regions, thereby allowing for innovative designs in LED display technologies.

Career Highlights

Nayak has made substantial contributions while working at notable companies such as Globalfoundries Inc. and Xilinx, Inc. His experience in these leading semiconductor firms has equipped him with the expertise needed to drive innovation in the industry. His work at these organizations underscores his commitment to advancing technologies that profoundly impact the electronics sector.

Collaborations

Throughout his career, Deepak K Nayak has collaborated with talented individuals, including Srinivasa Banna and Yuhao Luo. These partnerships have not only enriched his professional experience but have also contributed to the successful development and implementation of innovative semiconductor technologies.

Conclusion

Deepak K Nayak's extensive portfolio of patents and his collaborative efforts in the semiconductor industry highlight his innovative spirit and dedication to advancing technology. His latest inventions continue to push the boundaries of what is possible in light-emitting diodes and semiconductor structures, positioning him as a key figure in the ongoing evolution of electronic devices.

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