The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Jul. 14, 2017
Globalfoundries Inc., Grand Cayman, KY;
Srinivasa Banna, San Jose, CA (US);
Deepak Nayak, Fremont, CA (US);
Luke England, Saratoga Springs, NY (US);
Rahul Agarwal, Waterford, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Methods of forming an integrated RGB LED and Si CMOS driver wafer and the resulting devices are provided. Embodiments include providing a plurality of first color die over a CMOS wafer, each first color die being laterally separated with a first oxide and electrically connected to the CMOS wafer; providing a second color die above each first color die, each second color die being separated from each other with a second oxide, bonded to a first color die, and electrically connected to the CMOS wafer through the bonded first color die; removing a portion of each second color die to expose a portion of each bonded first color die; forming a conformal TCO layer over each first and second color die and on a side surface of each second color die and oxide; forming a PECVD oxide layer over the CMOS wafer; and planarizing the PECVD oxide layer.