The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2019
Filed:
Jul. 06, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Deepak K. Nayak, Union City, CA (US);
Srinivasa R. Banna, San Jose, CA (US);
Ajey P. Jacob, Watervliet, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/12 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 33/007 (2013.01); H01L 33/0025 (2013.01); H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01);
Abstract
The present disclosure generally relates to semiconductor structures and, more particularly, to light emitting diode (LED) structures and methods of manufacture. The method includes: forming a buffer layer on a substrate, the buffer layer having at least a lattice mismatch with the substrate; and relaxing the buffer layer by pixelating the buffer layer into discrete islands, prior to formation of a quantum well.