Shanghai, China

De Yuan Xiao

USPTO Granted Patents = 17 

Average Co-Inventor Count = 1.7

ph-index = 2

Forward Citations = 19(Granted Patents)


Company Filing History:


Years Active: 2011-2018

Loading Chart...
17 patents (USPTO):

Title: The Innovations of De Yuan Xiao: A Leading Mind in FinFET Technology

Introduction

De Yuan Xiao, an accomplished inventor based in Shanghai, China, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 17 patents, he is recognized for his innovative work in hybrid integrated semiconductor devices and FinFET fabrication methods.

Latest Patents

Among his latest patents, De Yuan Xiao has developed groundbreaking technologies including "Hybrid integrated semiconductor tri-gate and split dual-gate FinFET devices and method for manufacturing." This invention details a method for creating tri-gate and dual-gate FinFETs using a semiconductor on insulator (SOI) wafer. The process encompasses forming a hard mask, patterning cap portions, etching semiconductor layers, and creating a gate dielectric layer, ultimately resulting in advanced FinFET structures.

Another significant patent is titled "FinFET device and fabrication method thereof." This patent focuses on a transistor device comprising a substrate with a well portion, a source member, and a drain member. It incorporates a fin bar made from a first semiconductor material that overlaps the well portion and integrates a second semiconductor material in the form of a fin layer.

Career Highlights

De Yuan Xiao has had an illustrious career, particularly with major companies such as Semiconductor Manufacturing International (Shanghai) Corporation and Semiconductor Manufacturing International (Beijing) Corporation. His contributions have been pivotal in advancing semiconductor manufacturing processes, thereby enhancing the efficiency and performance of electronic devices.

Collaborations

Throughout his career, De Yuan Xiao has collaborated with notable professionals in the industry, including Guo Qing Chen and Roger Lee. These partnerships have further enriched his innovations and led to the refinement of cutting-edge semiconductor technologies.

Conclusion

De Yuan Xiao’s relentless pursuit of innovation in the semiconductor field highlights his status as a leading figure in technology advancements. With an impressive array of patents and a proven track record in various esteemed corporations, he continues to shape the future of semiconductor design and fabrication. As technologies evolve, the impact of his inventions will undoubtedly be felt across multiple sectors, driving further breakthroughs in the industry.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…