The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Mar. 21, 2013
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
De Yuan Xiao, Shanghai, CN;
Guo Qing Chen, Shanghai, CN;
Roger Lee, Shanghai, CN;
Chin Fu Yen, Shanghai, CN;
Su Xing, Shanghai, CN;
Xiao Lu Huang, Shanghai, CN;
Yong Sheng Yang, Shanghai, CN;
Abstract
A device and method for integrated circuits with surrounding gate structures are disclosed. The device includes a semiconductor substrate and a fin structure on the semiconductor substrate. The fin structure is doped with a first conductivity type and includes a source region at one distal end and a drain region at the opposite distal end. The device further includes a gate structure overlying a channel region disposed between the source and drain regions of the fin structure. The fin structure has a rectangular cross-sectional bottom portion and an arched cross-sectional top portion. The arched cross-sectional top portion is semi-circular shaped and has a radius that is equal to or smaller than the height of the rectangular cross-sectional bottom portion. The source, drain, and the channel regions each are doped with dopants of the same polarity and the same concentration.