The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Apr. 29, 2014
Applicant:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventor:
De Yuan Xiao, Shanghai, CN;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/772 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/12 (2006.01); H01L 29/775 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 29/122 (2013.01); H01L 29/42364 (2013.01); H01L 29/42376 (2013.01); H01L 29/66431 (2013.01); H01L 29/66462 (2013.01); H01L 29/7782 (2013.01); H01L 29/7789 (2013.01); H01L 29/0673 (2013.01); H01L 29/775 (2013.01);
Abstract
A method of fabricating a semiconductor device is provided. The method includes forming a substrate structure, wherein the substrate structure includes a substrate and a fin-shaped barrier layer formed on a surface of the substrate; forming a quantum well (QW) material layer on a surface of the fin-shaped barrier layer; and forming a barrier material layer on the QW material layer.
Xiao, De. (2015). Semiconductor device and fabrication method thereof (U.S. Patent No. 9209289). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9209289
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile