logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9269772 B1

PDFFull Text
Date of Patent:
Feb. 23, 2016

Filed:

May. 19, 2014

Semiconductor device and fabrication method thereof

Applicant:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Inventor:

De Yuan Xiao, Shanghai, CN;

Assignee:

SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, , CN;

Attorney:

Innovation Counsel LLP

Primary Examiner:

Thien F Tran

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/0328 (2006.01); H01L 31/0336 (2006.01); H01L 31/072 (2012.01); H01L 31/109 (2006.01); H01L 29/15 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/12 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/151 (2013.01); H01L 29/1037 (2013.01); H01L 29/122 (2013.01); H01L 29/66431 (2013.01); H01L 29/66462 (2013.01); H01L 29/66969 (2013.01); H01L 29/7783 (2013.01); H01L 29/7789 (2013.01); H01L 29/78 (2013.01); H01L 29/0657 (2013.01);
Abstract

A semiconductor device and a method for fabricating the same are disclosed. In the method, a substrate structure is provided, including a substrate and a fin-shaped buffer layer formed on the surface of the substrate. A QW material layer is formed on the surface of the fin-shaped buffer layer. A barrier material layer is formed on the QW material layer. The QW material layer is suitable for forming an electron gas therein. Thereby the short-channel effect is improved, while high mobility of the semiconductor device is guaranteed. In addition, according to the present disclosure, thermal dissipation of the semiconductor device may be improved, and thus performance and stability of the device may be improved.

Find Patent Forward Citations

Xiao, De. (2016). Semiconductor device and fabrication method thereof (U.S. Patent No. 9269772). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9269772

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…