The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2017
Filed:
May. 16, 2014
Applicant:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventor:
De Yuan Xiao, Shanghai, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 21/8258 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/8258 (2013.01); H01L 21/823431 (2013.01); H01L 27/0605 (2013.01);
Abstract
A transistor device may include a substrate that has a well portion. The transistor device may further include a source member and a drain member. The transistor device may further include a fin bar. The fin bar may be formed of a first semiconductor material, may be disposed between the source member and the drain member, and may overlap the well portion. The transistor device may further include a fin layer. The fin layer may be formed of a second semiconductor material, may be disposed between the source member and the drain member, and may contact the fin bar.