Fairfax, VT, United States of America

Daniel Scott Vanslette

USPTO Granted Patents = 23 

Average Co-Inventor Count = 4.1

ph-index = 4

Forward Citations = 73(Granted Patents)


Location History:

  • Highgate Springs, VT (US) (2004 - 2005)
  • Essex Junction, VT (US) (2011)
  • Faifax, VT (US) (2014)
  • Fairfax, VT (US) (2001 - 2021)

Company Filing History:


Years Active: 2001-2021

where 'Filed Patents' based on already Granted Patents

23 patents (USPTO):

Title: Innovations by Daniel Scott Vanslette in Transparent Conductive Electrodes

Introduction

Daniel Scott Vanslette, an accomplished inventor based in Fairfax, Vermont, has made significant contributions to the field of materials science and semiconductor technology. With an impressive portfolio of 23 patents, his work primarily focuses on innovative techniques for developing transparent conductive electrodes. His expertise has paved the way for advancements in electronic devices and energy-efficient technologies.

Latest Patents

Among his latest innovations are two notable patents that detail methods for forming a metal silicide transparent conductive electrode. The first patent describes a process for creating a metal silicide nanowire network, which involves tightly fused metal silicide nanowires arranged disorderly on a substrate. This method includes applying a solution containing silicon nanowires, depositing a metal layer, and conducting a silicidation anneal to achieve the desired structure. After this process, any remaining unreacted materials can be selectively removed.

In a similar vein, his second patent outlines a more structured approach to forming a transparent conductive electrode. This method involves printing two sets of silicon nanowires in perpendicular orientations on the substrate, followed by the application of a metal layer. A silicidation anneal is then conducted, resulting in an orderly grid of fused metal silicide nanowires. This innovation enhances the efficiency of the electrode while allowing for the selective removal of unreacted materials post-processing.

Career Highlights

Daniel has worked with leading technology firms, most notably IBM and Globalfoundries Inc., where he has honed his skills in semiconductor fabrication and materials engineering. His experience at these reputable companies has equipped him with a deep understanding of the practical applications of his inventions.

Collaborations

In his career, Daniel has collaborated with notable coworkers such as Jeffrey P. Gambino and Anthony K. Stamper. Their contributions and teamwork have played an essential role in the development and implementation of their innovative technologies.

Conclusion

Daniel Scott Vanslette stands out as a prolific inventor whose advancements in transparent conductive electrodes are reshaping the landscape of electronic materials. With a solid foundation in semiconductor technology and an impressive patent portfolio, his contributions continue to influence the future of electronics and energy solutions.

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