The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 06, 2021

Filed:

Aug. 03, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Jeffrey P. Gambino, Westford, VT (US);

Derrick Liu, Winooski, VT (US);

Daniel S. Vanslette, Fairfax, VT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0224 (2006.01); H01L 33/00 (2010.01); H01L 33/42 (2010.01); H01L 51/00 (2006.01); B82Y 10/00 (2011.01); H01B 1/24 (2006.01); H05K 3/10 (2006.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
H01L 31/1884 (2013.01); B82Y 10/00 (2013.01); H01L 31/022408 (2013.01); H01L 31/022425 (2013.01); H01L 31/022466 (2013.01); H01L 33/005 (2013.01); H01L 33/42 (2013.01); H01L 51/0021 (2013.01); B82Y 30/00 (2013.01); H01B 1/24 (2013.01); H05K 3/105 (2013.01); H05K 2201/0108 (2013.01); H05K 2201/026 (2013.01); H05K 2203/1194 (2013.01); Y02E 10/50 (2013.01);
Abstract

A method of forming a metal silicide nanowire network that includes multiple metal silicide nanowires fused together in an orderly arrangement on a substrate. The metal silicide nanowire network can be formed by printing a first set of multiple parallel silicon nanowires on the substrate and printing a second set of multiple parallel silicon nanowires over the first set of multiple parallel silicon nanowires such that said first set is perpendicular to said second set. A metal layer can be formed on the silicon nanowires. A silicidation anneal process is performed such that metal silicide nanowires are formed and fused together in an orderly arrangement, forming a grid network. After the silicidation anneal is performed, any unreacted silicon or metal can be selectively removed.


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