The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2015

Filed:

Jun. 19, 2012
Applicants:

Jeffrey P. Gambino, Westford, VT (US);

Jessica A. Levy, Milton, VT (US);

Cameron E. Luce, Essex Junction, VT (US);

Daniel S. Vanslette, Fairfax, VT (US);

Bucknell C. Webb, Yorktown Heights, NY (US);

Inventors:

Jeffrey P. Gambino, Westford, VT (US);

Jessica A. Levy, Milton, VT (US);

Cameron E. Luce, Essex Junction, VT (US);

Daniel S. Vanslette, Fairfax, VT (US);

Bucknell C. Webb, Yorktown Heights, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 2924/0002 (2013.01); H01L 21/76898 (2013.01);
Abstract

A through silicon via with sidewall roughness and methods of manufacturing the same are disclosed. The method includes forming a via in a substrate and roughening a sidewall of the via by depositing material within the via. The method further includes removing a backside of the substrate to form a through via with a roughened sidewall structure.


Find Patent Forward Citations

Loading…