The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2016

Filed:

Jun. 11, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Jeffrey P. Gambino, Westford, VT (US);

Cameron E. Luce, Essex Junction, VT (US);

Daniel S. Vanslette, Fairfax, VT (US);

Bucknell C. Webb, Yorktown Heights, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/538 (2006.01); G06F 17/50 (2006.01); H01L 23/00 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5384 (2013.01); G06F 17/5045 (2013.01); G06F 17/5077 (2013.01); H01L 21/76843 (2013.01); H01L 21/76844 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/562 (2013.01); H01L 27/0207 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/73257 (2013.01); H01L 2924/1305 (2013.01);
Abstract

Disclosed herein are through silicon vias (TSVs) and contacts formed on a semiconductor material, methods of manufacturing, and design structures. The method includes forming a contact hole in a dielectric material formed on a substrate. The method further includes forming a via in the substrate and through the dielectric material. The method further includes lining the contact hole and the dielectric material with a metal liner using a deposition technique that will avoid formation of the liner in the viaformed in the substrate. The method further includes filling the contact hole and the via with a metal such that the metal is formed on the liner in the contact hole and directly on the substrate in the via.


Find Patent Forward Citations

Loading…