Daniel Mark Nelson

USPTO Granted Patents = 26 (Patent Applications = 1)

Average Co-Inventor Count = 4.2

ph-index = 7

Forward Citations = 136(Granted Patents)

Location History:

Rochester, MN (US) (2008 - 2014)
Lakeville, MN (US) (2014)
Minneapolis, MN (US) (2015 - 2018)

Company Filing History:

25 out of 164,108

International Business Machines Corporation

patents

1 out of 1,813

Avago Technologies General IP (singapore) Pte. Ltd.

patents

Years Active: 2008-2018

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26 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 9959926 - Method and apparatus for selective write assist using shared boost capacitor (2018-05-01),

2. 9142560 - Layout to minimize FET variation in small dimension photolithography (2015-09-22),

3. 8860141 - Layout to minimize FET variation in small dimension photolithography (2014-10-14),

4. 8824196 - Single cycle data copy for two-port SRAM (2014-09-02),

5. 8711606 - Data security for dynamic random access memory using body bias to clear data at power-up (2014-04-29),

6. 8675427 - Implementing RC and coupling delay correction for SRAM (2014-03-18),

7. 8520429 - Data dependent SRAM write assist (2013-08-27),

8. 8467230 - Data security for dynamic random access memory using body bias to clear data at power-up (2013-06-18),

9. 8395963 - Data security for dynamic random access memory at power-up (2013-03-12),

10. 8344782 - Method and apparatus to limit circuit delay dependence on voltage for single phase transition (2013-01-01),

11. 8279687 - Single supply sub VDD bit-line precharge SRAM and method for level shifting (2012-10-02),

12. 8159260 - Delay chain burn-in for increased repeatability of physically unclonable functions (2012-04-17),

13. 7971164 - Assessing resources required to complete a VLSI design (2011-06-28),

14. 7924633 - Implementing boosted wordline voltage in memories (2011-04-12),

15. 7911827 - Implementing enhanced SRAM stability and enhanced chip yield with configurable wordline voltage levels (2011-03-22),

Title: The Ingenious Innovations of Daniel Mark Nelson

Introduction

Daniel Mark Nelson, a prolific inventor based in Rochester, MN, has made significant contributions to the field of semiconductor technology, holding an impressive portfolio of 26 patents. His inventive work primarily focuses on memory devices and circuit design, showcasing his expertise and innovation in this rapidly evolving technological landscape.

Latest Patents

Among his most recent patents, one notable invention is the "Method and apparatus for selective write assist using shared boost capacitor." This patent discloses a write assist circuitry designed to facilitate memory devices in changing logical states during write operations. The innovative write assist circuit can be coupled to a shared boost capacitor, enabling negative bitline assistance by selectively driving corresponding bitline pairs negative during a write operation.

Another significant patent is titled "Layout to minimize FET variation in small dimension photolithography." This invention addresses the need for close tracking between field effect transistors (FETs) on semiconductor chips when different masks are used during processing. The layout optimization proposed in the patent enhances the performance of static random access memory (SRAM) designs by ensuring accurate tracking among multiple FETs.

Career Highlights

Daniel’s professional journey includes substantial contributions to well-respected companies such as IBM and Avago Technologies General IP (Singapore) Pte. Ltd. His work at these organizations has enriched the advancement of semiconductor technologies and memory design methodologies.

Collaborations

Throughout his career, Daniel has collaborated with skilled professionals, including Derick Gardner Behrends and Travis Reynold Hebig. Working alongside such talented individuals has undoubtedly fostered innovative ideas and solutions within their projects.

Conclusion

Daniel Mark Nelson's remarkable advancements in the field of semiconductor innovation and his extensive patent portfolio demonstrate his invaluable contributions to technology. His work continues to influence the design and functionality of modern memory devices, establishing him as a noteworthy inventor in the industry.

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