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For the Inventor, By the Inventor

Meridian, ID, United States of America

Daniel Billingsley

USPTO Granted Patents = 24 

Average Co-Inventor Count = 5.6

ph-index = 2

Forward Citations = 10(Granted Patents)


Company Filing History:

goldMedal21 out of 37,972 
 
Micron Technology Incorporated
 patents
where one patent can have more than one assignee

Years Active: 2019-2025

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24 patents (USPTO):Explore Patents
1. 12426269 - Barrier structure for preventing etching to control circuitry (2025-09-23),
2. 12426261 - Integrated circuitry comprising a memory array comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells (2025-09-23),
3. 12408414 - Transistor and memory circuitry comprising strings of memory cells (2025-09-02),
4. 12342542 - Integrated circuitry comprising a memory array comprising strings of memory cells and comprising a stack containing non-stoichiometric silicon nitride (2025-06-24),
5. 12171101 - Microelectronic devices including conductive structures (2024-12-17),
6. 12096633 - Memory arrays and methods used in forming a memory array comprising strings of memory cells (2024-09-17),
7. 11990367 - Apparatus and memory device including conductive lines and contacts, and methods of forming an apparatus including conductive lines and contacts (2024-05-21),
8. 11894305 - Microelectronic devices including staircase structures, and related memory devices and electronic systems (2024-02-06),
9. 11792983 - Integrated circuitry comprising a memory array comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells (2023-10-17),
10. 11700729 - Memory arrays and methods used in forming a memory array comprising strings of memory cells (2023-07-11),
11. 11569120 - Memory arrays and methods used in forming a memory array comprising strings of memory cells (2023-01-31),
12. 11552090 - Integrated circuitry comprising a memory array comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells (2023-01-10),
13. 11527546 - Microelectronic devices including conductive structures, and related memory devices, electronic systems, and methods (2022-12-13),
14. 11476274 - Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells (2022-10-18),
15. 11315877 - Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems (2022-04-26),

Title: Innovations of Daniel Billingsley in Microelectronic Devices

Introduction

Daniel Billingsley, an accomplished inventor based in Meridian, ID, has made significant contributions to the field of microelectronics. With a remarkable portfolio of 20 patents, he has been a key figure in developing advanced technologies that enhance electronic systems and memory devices.

Latest Patents

Among his latest innovations, Billingsley has introduced a patent for a microelectronic device that features a sophisticated stack structure comprising alternating conductive and insulative structures organized in tiers. This design not only includes strings of memory cells that vertically extend through the structure but also evidence a unique channel material that enhances device performance. Additionally, he has developed a memory array that employs strings of memory cells positioned within laterally-spaced memory blocks, showcasing different material compositions for better efficiency and reliability.

Career Highlights

Billingsley currently contributes his expertise to Micron Technology Incorporated, a leader in the semiconductor industry. Through his inventive work, he has been instrumental in driving forward the company’s technological advancements in memory solutions, which are integral to modern computing systems.

Collaborations

Throughout his career, Billingsley has collaborated with notable individuals such as Yongjun Jeff Hu and Jordan D Greenlee. These partnerships have fostered an environment of innovation, enhancing the development of cutting-edge technologies within the industry.

Conclusion

Daniel Billingsley stands out as a prominent inventor in the realm of microelectronics, with a substantial portfolio that reflects his commitment to innovation. His work not only drives advancements in memory devices but also influences the broader landscape of electronic systems, solidifying his place as an influential figure in technology development.

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