Integrated circuitry comprising a memory array comprising strings of memory cells and comprising a stack containing non-stoichiometric silicon nitride

Abstract

A method used in forming a memory array comprising strings of memory cells comprises forming an upper stack directly above a lower stack. The lower stack comprises vertically-alternating lower-first-tiers and lower-second-tiers. The upper stack comprises vertically-alternating upper-first-tiers and upper-second-tiers. Lower channel openings extend through the lower-first-tiers and the lowers-second-tiers. The lower channel openings have sacrificial material therein. An upper of the lower-first-tiers or a lower of the upper-first-tiers comprises non-stoichiometric silicon nitride comprising (a) or (b), where (a): a nitrogen-to-silicon atomic ratio greater than 1.33 and less than 1.5; and (b): a nitrogen-to-silicon atomic ratio greater than or equal to 1.0 and less than 1.33. A higher of the upper-first-tiers that is above said lower upper-first-tier comprises silicon nitride not having either the (a) or the (b). Upper channel openings are etched through the upper-first-tiers and the upper-second-tiers to stop on said upper lower-first-tier or said lower upper-first-tier. After the stop, the sacrificial material is removed from the lower channel openings and form channel-material strings in the upper and lower channel openings. Other embodiments, including structure independent of method, are disclosed.