The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

May. 19, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

John Hopkins, Meridian, ID (US);

Jordan D. Greenlee, Boise, ID (US);

Daniel Billingsley, Boise, ID (US);

Alyssa N. Scarbrough, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/40 (2023.01); H10B 41/41 (2023.01);
U.S. Cl.
CPC ...
H10B 43/40 (2023.02); H10B 41/41 (2023.02);
Abstract

Methods, systems, and devices for a barrier structure for preventing removal of, such as etching to, control circuitry are described. A memory device may include control circuitry over a substrate and for accessing a memory array and contact regions configured to couple with the control circuitry. The memory device may include barrier regions between respective contact regions that includes a barrier material. The memory device may include a stack of layers over the barrier region and the contact regions that is associated with the memory array, and the barrier material may prevent a removal (e.g., an etch) through the stack of layers and at least partially between contact regions from extending to the control circuitry.


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