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For the Inventor, By the Inventor

Boise, ID, United States of America

Alyssa N Scarbrough

LinkedIn
USPTO Granted Patents = 40 

Average Co-Inventor Count = 2.9

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:

goldMedal39 out of 37,972 
 
Micron Technology Incorporated
 patents
where one patent can have more than one assignee

Years Active: 2021-2025

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40 patents (USPTO):Explore Patents
1. 12507405 - Integrated assemblies and methods of forming integrated assemblies (2025-12-23),
2. 12432924 - Integrated circuitry and method used in forming a memory array comprising strings of memory cells (2025-09-30),
3. 12426269 - Barrier structure for preventing etching to control circuitry (2025-09-23),
4. 12369321 - Memory circuitry and method used in forming memory circuitry (2025-07-22),
5. 12334432 - Integrated assemblies and methods of forming integrated assemblies (2025-06-17),
6. 12315813 - Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells (2025-05-27),
7. 12300616 - Memory device including staircase structure having conductive pads (2025-05-13),
8. 12300318 - Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells (2025-05-13),
9. 12295140 - Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells (2025-05-06),
10. 12288585 - Integrated circuitry comprising a memory array comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells (2025-04-29),
11. 12277973 - Memory array comprising strings of memory cells and conductive gate lines of different vertical thicknesses (2025-04-14),
12. 12266569 - Integrated circuitry, a memory array comprising strings of memory cells, a method used in forming a conductive via, a method used in forming a memory array comprising strings of memory cells (2025-04-01),
13. 12255143 - Microelectronic devices including composite pad structures on staircase structures, and related methods, memory devices, and electronic systems (2025-03-18),
14. 12250499 - Capturing video data of events associated with vehicles (2025-03-11),
15. 12245426 - Staircase formation in a memory array (2025-03-04),

Title: The Innovative Contributions of Alyssa N Scarbrough in Memory Technology

Introduction: Alyssa N Scarbrough is a pioneering inventor based in Boise, ID, known for her remarkable contributions to memory technology. With a total of 26 patents to her name, she demonstrates a formidable presence in the field of innovations related to memory arrays and their applications.

Latest Patents: Among her latest patents, Alyssa has developed groundbreaking methods and systems for staircase formation in a memory array. This inventive process involves the deposition and doping of liner materials on a tread above contact surfaces. The innovative techniques outlined allow for selective removal of undoped materials, facilitating better exposure of contact surfaces necessary for optimizing memory performance. Additionally, her methods for forming a memory array comprising strings of memory cells are noteworthy, as they detail the creation of a stack of vertically-alternating tiers of different compositions, significantly enhancing the efficiency and architecture of memory storage.

Career Highlights: Alyssa works at Micron Technology Incorporated, a leading company in the semiconductor industry. Her ingenuity in the realm of memory technology has placed her at the forefront of innovations in the field, and her extensive portfolio of patents speaks volumes about her capabilities and contributions to advancing technology.

Collaborations: Throughout her career, Alyssa has collaborated with esteemed colleagues, including John David Hopkins and Jordan D Greenlee. These collaborative efforts have not only enriched her work but also contributed to the development of cutting-edge technologies in memory systems.

Conclusion: Alyssa N Scarbrough continues to make significant strides in memory technology, showcasing her expertise and creativity through her numerous patents. Her work at Micron Technology Incorporated and her collaborations with other talented individuals position her as an influential figure within the industry, driving forward the boundaries of innovation in memory arrays.

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