Enter inventor name

Alyssa N Scarbrough

This inventor holds 55 USPTO granted patents and 38 published patent applications, primarily in Memory Array Technology. Top assignees: Micron Technology Incorporated, Lodestar Licensing Group LLC. Active years: 2021-2026.

USPTO Granted Patents = 55 (Patent Applications = 38)

% Patents Active = 78.2

Average Co-Inventor Count = 2.7

ph-index = 1

Forward Citations = 13(Granted Patents)

Company Filing History:

53 out of 39,149

Micron Technology Incorporated

patents

1 out of 218

Lodestar Licensing Group LLC

patents

where one patent can have more than one assignee

Years Active: 2021-2026

Loading Chart...

Areas of Expertise:

Memory Arrays

Memory Cells

Integrated Circuitry

Microelectronic Devices

Memory Device

Conductive Pads

Staircase Structure

Barrier Structure

Conductive Via

Insulator Walls

Trenches

Composite Pad Structures

55 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12720743 - Memory array and method used in forming a memory array comprising strings of memory cells (2026-08-25),

2. 12713598 - Memory Circuitry And Method Used In Forming Memory Circuitry (2026-08-18),

3. 12713597 - Memory Circuitry And Method Used In Forming Memory Circuitry (2026-08-18),

4. 12705885 - Augmented reality devices for safety alerting (2026-08-11),

5. 12672327 - Electronic devices comprising pillars extending through a semiconductor material and adjacent to a source implant region, and related electronic systems and methods (2026-06-30),

6. 12660190 - Intervening polysilicon materials that are thicker at distal edges than at pillars defining memory cells and related apparatuses, systems, and methods (2026-06-16),

7. 12660189 - Integrated assemblies and methods of forming integrated assemblies (2026-06-16),

8. 12660180 - Methods used in forming a memory array comprising strings of memory cells and through-array vias in a through-array-via region wherein TAV openings and horizontally-elongated trenches are formed or wherein tav constructions comprise first and second non-conductive cylinders (2026-06-16),

9. 12626761 - Memory circuitry and method used in forming memory circuitry (2026-05-12),

10. 12598972 - Methods used in forming a memory array comprising strings of memory cells including insulator walls in a through-array-via region (2026-04-07),

11. 12598742 - Memory array comprising strings of memory cells and method used in forming a memory array comprising strings of memory cells (2026-04-07),

12. 12593680 - Integrated assemblies having liners or rings surrounding regions of conductive posts (2026-03-31),

13. 12520493 - Microelectronic devices including cap structures, and related electronic systems and methods (2026-01-06),

14. 12519011 - Staircase formation in a memory array (2026-01-06),

15. 12518826 - Method used in forming a memory array comprising strings of memory cells comprising forming trenches between memory-block regions after forming trenches to form laterally-spaced sub-block regions in the memory-block regions (2026-01-06),

Title: The Innovative Contributions of Alyssa N Scarbrough in Memory Technology

Introduction: Alyssa N Scarbrough is a pioneering inventor based in Boise, ID, known for her remarkable contributions to memory technology. With a total of 26 patents to her name, she demonstrates a formidable presence in the field of innovations related to memory arrays and their applications.

Latest Patents: Among her latest patents, Alyssa has developed groundbreaking methods and systems for staircase formation in a memory array. This inventive process involves the deposition and doping of liner materials on a tread above contact surfaces. The innovative techniques outlined allow for selective removal of undoped materials, facilitating better exposure of contact surfaces necessary for optimizing memory performance. Additionally, her methods for forming a memory array comprising strings of memory cells are noteworthy, as they detail the creation of a stack of vertically-alternating tiers of different compositions, significantly enhancing the efficiency and architecture of memory storage.

Career Highlights: Alyssa works at Micron Technology Incorporated, a leading company in the semiconductor industry. Her ingenuity in the realm of memory technology has placed her at the forefront of innovations in the field, and her extensive portfolio of patents speaks volumes about her capabilities and contributions to advancing technology.

Collaborations: Throughout her career, Alyssa has collaborated with esteemed colleagues, including John David Hopkins and Jordan D Greenlee. These collaborative efforts have not only enriched her work but also contributed to the development of cutting-edge technologies in memory systems.

Conclusion: Alyssa N Scarbrough continues to make significant strides in memory technology, showcasing her expertise and creativity through her numerous patents. Her work at Micron Technology Incorporated and her collaborations with other talented individuals position her as an influential figure within the industry, driving forward the boundaries of innovation in memory arrays.

Profile summary based on public USPTO records.

Please report any incorrect information to [email protected]