The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Sep. 06, 2022
Micron Technology, Inc., Boise, ID (US);
Alyssa N. Scarbrough, Boise, ID (US);
John D. Hopkins, Meridian, ID (US);
Jordan D. Greenlee, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Source terminals of memory devices and related apparatuses, computing systems, and methods are disclosed. An apparatus includes a first polysilicon material, a second polysilicon material offset from the first polysilicon material, an intervening polysilicon material between the first polysilicon material and the second polysilicon material, and pillars defining memory cells. The pillars extend through the second polysilicon material and a proximal portion of the intervening polysilicon material into the first polysilicon material. The one or more insulative materials are at a distal edge of the intervening polysilicon material. The intervening polysilicon material is thicker at the distal edge than at the pillars. A method includes removing, using an isotropic etch process, portions of the first polysilicon material and the second polysilicon material in a trench and forming the intervening polysilicon material between the first polysilicon material and the second polysilicon material.