The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Apr. 11, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

John D. Hopkins, Meridian, ID (US);

Alyssa N. Scarbrough, Boise, ID (US);

Jordan D. Greenlee, Boise, ID (US);

Nancy M. Lomeli, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/35 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/35 (2023.02); H10B 43/27 (2023.02);
Abstract

A microelectronic device includes a source stack, a source contact vertically adjacent to the source stack, a semiconductor material vertically adjacent to the source contact, tiers of alternating conductive materials and dielectric materials vertically adjacent to the semiconductor dielectric material, a dielectric structure within a slot structure and extending through the tiers of the microelectronic device to the source contact of the microelectronic device, oxide cap structures laterally between the semiconductor material and the dielectric structure, and pillars extending through the tiers, the semiconductor material, and the source contact and into the source stack. Related electronic systems and methods are also disclosed.


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