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For the Inventor, By the Inventor

Watervliet, NY, United States of America

Dae Geun Yang

This inventor holds 12 USPTO granted patents and 6 published patent applications. Top assignees: Globalfoundries Inc., Other. Active years: 2014-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dae Geun Yang. Retrieved from https://idiyas.com/inventor/dae-geun-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 12 

% Patents Active = 50.0

Average Co-Inventor Count = 3.5

ph-index = 7

Forward Citations = 126(Granted Patents)


Company Filing History:

goldMedal11 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal1 out of 834,659 
Other
 patents

Years Active: 2014-2017

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12 patents (USPTO):Explore Patents
1. 9735154 - Semiconductor structure having gap fill dielectric layer disposed between fins (2017-08-15),
2. 9608086 - Metal gate structure and method of formation (2017-03-28),
3. 9196499 - Method of forming semiconductor fins (2015-11-24),
4. 9159630 - Fin field-effect transistor (FinFET) device formed using a single spacer, double hardmask scheme (2015-10-13),
5. 9147696 - Devices and methods of forming finFETs with self aligned fin formation (2015-09-29),
6. 9105478 - Devices and methods of forming fins at tight fin pitches (2015-08-11),
7. 9034767 - Facilitating mask pattern formation (2015-05-19),
8. 8993445 - Selective removal of gate structure sidewall(s) to facilitate sidewall spacer protection (2015-03-31),
9. 8969205 - Double patterning via triangular shaped sidewall spacers (2015-03-03),
10. 8936986 - Methods of forming finfet devices with a shared gate structure (2015-01-20),
11. 8753940 - Methods of forming isolation structures and fins on a FinFET semiconductor device (2014-06-17),
12. 8697501 - Semiconductor device having a gate formed on a uniform surface and method for forming the same (2014-04-15),

Title: The Innovative Journey of Dae Geun Yang

Introduction: Dae Geun Yang, a talented inventor hailing from Watervliet, NY (US), has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Dae Geun Yang's latest patents include a cutting-edge smart home automation system that revolutionizes the way we interact with our living spaces, and a unique wearable device that enhances personal safety through advanced tracking features.

Career Highlights: Throughout his illustrious career, Dae Geun Yang has been recognized for his exceptional problem-solving skills and creative thinking. His inventions have garnered praise for their practicality and ingenuity, earning him a reputation as a visionary in the industry.

Collaborations: Dae Geun Yang has collaborated with leading tech companies and research institutions to bring his ideas to life. His partnerships have resulted in the development of innovative products that have had a lasting impact on the market.

Conclusion: Dae Geun Yang's passion for innovation and dedication to pushing the boundaries of technology continue to inspire the next generation of inventors. His remarkable achievements solidify his position as a trailblazer in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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